The invention relates to the power semiconductor technology field and discloses a silicon carbide semiconductor device terminal and a manufacturing method thereof. A terminal structure comprises a plurality of well region auxiliary rings, a junction terminal extension, a plurality of junction terminal auxiliary rings, a plurality of base region auxiliary rings and a passivation layer. The well region auxiliary rings are located outside a well region, the junction terminal extension is close to the well region, and a depth is smaller than that of the well region. The junction terminal auxiliaryrings are located on an outer side of the junction terminal extension, and the base region auxiliary rings are located on an outer side of the junction terminal auxiliary rings. By using less photoetching times and ion implantation times and through introducing the well region auxiliary rings, the junction terminal auxiliary rings and the base region auxiliary rings, electric field distribution of a high field region is optimized so that a blocking characteristic of the device is improved, and tolerance of a blocking voltage of the device to a terminal doping concentration is improved. The invention also provides a process method of using the terminal structure in a silicon carbide MOSFET device.