基本信息:
- 专利标题： 薄膜体声波谐振器、滤波器及其制备方法
- 专利标题（英）：Film bulk acoustic resonator, filter and preparation method thereof
- 申请号：CN201910800141.4 申请日：2019-08-28
- 公开(公告)号：CN110504938A 公开(公告)日：2019-11-26
- 发明人： 张树民 , 王国浩 , 汪泉 , 陈海龙 , 郑根林 , 其他发明人请求不公开姓名
- 申请人： 杭州左蓝微电子技术有限公司
- 申请人地址： 浙江省杭州市杭州经济技术开发区白杨街道6号大街452号2幢B711-714号房
- 专利权人： 杭州左蓝微电子技术有限公司
- 当前专利权人： 杭州左蓝微电子技术有限公司
- 当前专利权人地址： 浙江省杭州市杭州经济技术开发区白杨街道6号大街452号2幢B711-714号房
- 代理机构： 北京中知法苑知识产权代理事务所
- 代理人： 李明
- 优先权： 201910681151.0 2019.07.26 CN
- 主分类号： H03H3/02
- IPC分类号： H03H3/02 ; H03H9/02 ; H03H9/17 ; H03H9/54
The invention provides a film bulk acoustic resonator, a filter and a preparation method of the film bulk acoustic resonator, belongs to the technical field of electronic manufacturing, and can at least partially solve the problems that an existing resonant filter has certain limitation in power bearing capacity, when the input power is increased, heat dissipation of a device is limited, the temperature of the device rises, the frequency of the device drifts, nonlinearity is generated, and the performance of the device is affected. According to the invention, SiC is used as a substrate material; the electrodes of the resonator are connected with the SiC substrate, and heat caused by high input power is dissipated in time by utilizing high thermal conductivity of the SiC substrate, so thattemperature rise of the device is avoided, the problems of frequency drift and nonlinearity of the device caused by temperature rise of the device are further avoided, and the performance of the device is improved.
公开/授权文献:
- CN110504938B 薄膜体声波谐振器、滤波器及其制备方法 公开/授权日：2022-07-19
IPC结构图谱:
| H | 电学 |
| --H03 | 基本电子电路 |
| ----H03H | 阻抗网络，例如谐振电路；谐振器 |
| ------H03H3/00 | 专用于制造阻抗网络、谐振电路、谐振器的设备或方法 |
| --------H03H3/007 | .用于制造机电谐振器或网络 |
| ----------H03H3/02 | ..用于制造压电或电致伸缩谐振器或网络 |