The invention relates to a semiconductor device with a heat-radiating and packaging structure and a manufacturing method thereof, and the semiconductor device comprises a layer-adding packaging substrate which is started to manufacture on the basis of a copper core substrate. The layer-adding packaging substrate comprises a thick copper crystal placing bonding pad, a high-density layer-adding circuit and a plurality of electrical pin bonding pads. The thick copper crystal placing bonding pad and the electrical pin bonding pads are integrally formed by the copper core substrate, the layer-adding circuit is formed by the laminated substrate, the layer-adding circuit extends to the periphery by taking the position of the thick copper crystal placing bonding pad as a core so as to provide winding wires required when connecting electronic components, and a plurality of electroplating blind holes are in conduction and connection with the electrical pin bonding pads. Therefore, the semiconductor device can simultaneously have the functions of the thick copper crystal placing bonding pad and the high-density layer-adding circuit, and lead the overall device to improve the reliability and be difficult to separate; furthermore, the semiconductor device has good packaging and good heat radiation effect due to the thick copper crystal placing bonding pad, and the layer-adding circuit can provide the good wire winding capacity.