
基本信息:
- 专利标题: 一种半导体储存器的灵敏放大器电路及其工作方法与应用
- 专利标题(英):Sensitive amplifier circuit of semiconductor memory and operating method and application thereof
- 申请号:CN200710058876.1 申请日:2007-08-20
- 公开(公告)号:CN101373627A 公开(公告)日:2009-02-25
- 发明人: 吕英杰 , 戴宇杰 , 张小兴 , 张慧泉 , 樊勃
- 申请人: 天津南大强芯半导体芯片设计有限公司
- 申请人地址: 天津市开发区宏达街23号泰达学院五区四楼
- 专利权人: 天津南大强芯半导体芯片设计有限公司
- 当前专利权人: 天津南大强芯半导体芯片设计有限公司
- 当前专利权人地址: 天津市开发区宏达街23号泰达学院五区四楼
- 代理机构: 国嘉律师事务所
- 代理人: 卢枫
- 主分类号: G11C7/06
- IPC分类号: G11C7/06
The invention relates to a sensitive amplifier circuit of a semiconductor memory, a working method and the application thereof. The amplifier circuit comprises a Schmidt buffer, an inverter (1), an inverter (2), a storage cell, and a current detector which is used for detecting the ampere of a current flows through the storage unit, converting the ampere into a voltage signal and outputting the voltage signal. The storage unit, the current detector, the Schmidt buffer, the inverter (1) and the inverter (2) are connected in sequence. The current detector detects the ampere of the current flowing through the storage unit, converts the ampere into a voltage signal and outputs the voltage signal. The Schmidt buffer reshapes the output voltage signal. The inverter (1) inverts the output signal of the Schmidt buffer. The inverter (2) inverts the inverter (1) and provides the carrying load ability for the output of the sensitive amplifier circuit. The sensitive amplifier circuit is applied to a storage circuit. The invention has the advantages of simple structure, lower power, lower requirement for working voltages, high stability and application in various storage circuits.
IPC结构图谱:
G | 物理 |
--G11 | 信息存储 |
----G11C | 静态存储器 |
------G11C7/00 | 数字存储器信息的写入或读出装置 |
--------G11C7/06 | .读出放大器;相关的电路 |